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Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy

 
: Baeumler, M.

Institute of Electronic Structure & Laser, Foundation for Research & Technology, Hellas ? IESL-FORTH-:
WOCSDICE-EXMATEC 2014, 38th Workshop on Compound Semiconductor Devices and Integrated Circuits and 12th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies : WOCSDICE - 15th-18th June, EXMATEC - 18th-20th June 2014, Delphi, Greece
Delphi, 2014
2 S.
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) <38, 2014, Delphi>
Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC) <12, 2014, Delphi>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
AlGaN/GaN high electron mobility transistors (HEMT) on wafer with trap densities (sigma)(int) at the SiN(x)/GaN hetero-interface in the range of 1-3 times the polarization charge (sigma)(pol) at the AlGaN/GaN interface have been investigated by electroluminescence microscopy (ELM). (sigma)(int) has been directly estimated from the voltage dependence of the electroluminescence (EL) peaks at the gate field plate (GFP) and the source terminated field plate (STFP) edge. The values compare well with those extracted from high voltage-capacitance voltage (HV-CV) measurements.

: http://publica.fraunhofer.de/dokumente/N-314809.html