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Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

 
: Müller, J.; Böscke, T.S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T.M.; Kalinin, S.V.; Schlösser, T.; Boschke, R.; Bentum, R. van; Schröder, U.; Mikolajick, T.

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Ghani, T. ; IEEE Electron Devices Society:
IEEE International Electron Devices Meeting, IEDM 2013. Proceedings : Washington, DC, USA, 9 - 11 December 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-3726-4
ISBN: 978-1-4799-2307-6
ISBN: 978-1-4799-2306-9
S.10.8.1-10.8.4
International Electron Devices Meeting (IEDM) <2013, Washington/DC>
Englisch
Konferenzbeitrag
Fraunhofer IPMS ()

Abstract
With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.

: http://publica.fraunhofer.de/dokumente/N-314757.html