Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

Ein koplanarer X-Band AlGaN/GaN-MMIC-Leistungsverstärker auf semiisolierendem SiC-Substrat
 
: Raay, F. van; Quay, R.; Kiefer, R.; Benkhelifa, F.; Raynor, B.; Pletschen, W.; Kuri, M.; Massler, H.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.

:

IEEE microwave and wireless components letters 15 (2005), Nr.7, S.460-462
ISSN: 1051-8207
ISSN: 1531-1309
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
coplanar waveguide; koplanare Wellenleiter; CPW; microstrip; Mikrostreifenleitung; FET; microwave power amplifier; Mikrowellen-Leistungsverstärker; field effect transistor; Feldeffekttransistor; MODFET; modulation-doped field effect transistor; modulationsdotierter Feldeffekt-Transistor; phased array; Radar; reliability; Zuverlässigkeit

Abstract
This work presents a two-stage high-power amplifier monolithic microwave integrated circuit (MMIC) operating between 9 GHz and 11 GHz based on a fully integrated AlGaN/GaN high electron mobility transistor (HEMT) technology on s.i. SiC substrate and is suitable for radar applications. The MMIC device with a chip size of 4.5 x 3 mm2 yields a linear gain of 20 dB and a maximum pulsed saturated output power of 13.4 W at 10 GHz equivalent to 3.3 W/mm at V(ind DS) = 35 V, 10% duty cycle, and a gain compression level of 5 dB. Further, dc reliability data are given for the MMIC HEMT technology.

: http://publica.fraunhofer.de/dokumente/N-31432.html