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2005
Journal Article
Titel
A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Alternative
Ein koplanarer X-Band AlGaN/GaN-MMIC-Leistungsverstärker auf semiisolierendem SiC-Substrat
Abstract
This work presents a two-stage high-power amplifier monolithic microwave integrated circuit (MMIC) operating between 9 GHz and 11 GHz based on a fully integrated AlGaN/GaN high electron mobility transistor (HEMT) technology on s.i. SiC substrate and is suitable for radar applications. The MMIC device with a chip size of 4.5 x 3 mm2 yields a linear gain of 20 dB and a maximum pulsed saturated output power of 13.4 W at 10 GHz equivalent to 3.3 W/mm at V(ind DS) = 35 V, 10% duty cycle, and a gain compression level of 5 dB. Further, dc reliability data are given for the MMIC HEMT technology.
Author(s)
Tags
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coplanar waveguide
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koplanare Wellenleiter
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CPW
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microstrip
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Mikrostreifenleitung
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FET
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microwave power amplifier
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Mikrowellen-Leistungsverstärker
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field effect transistor
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Feldeffekttransistor
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MODFET
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modulation-doped field effect transistor
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modulationsdotierter Feldeffekt-Transistor
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phased array
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Radar
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reliability
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Zuverlässigkeit