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New Defect Luminescence Scanner for Inline Control of Material Quality

Poster presented at European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 21-25 September 2014
: Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Oppel, Steffen; Schütz, Michael; Schneider, Adrian; Krieger, Michael; Weber, Jonas; Friedrich, Jochen

Poster urn:nbn:de:0011-n-3134573 (535 KByte PDF)
MD5 Fingerprint: d5727a98163035281b3b6cba615ede68
Erstellt am: 13.11.2014

2014, 1 Folie
European Conference on Silicon Carbide and Related Materials (ECSCRM) <10, 2014, Grenoble>
Bayerische Forschungsstiftung BFS
AZ-1028-12; SiC-WinS
Poster, Elektronische Publikation
Fraunhofer IISB ()
homoepitaxial growth; characterization; photoluminescence; critical defects; device processing

For inline control of the material quality, a non-destructive, non-contact, non-preparational as well as fast and reliable characterization method is needed. Photoluminescence (PL) imaging at room-temperature fulfills all these basic requirements and extended defects can be identified based on their spectral and geometrical fingerprints. Therefore, a new defect luminescence scanner (DLS) has been developed operating at conditions, which allow for rapid full-wafer scanning up to 150 mm wafers (measurement time approx. 20 min). The identification of defects imaged by the DLS will be presented in the paper. Furthermore, a possible inline use of the DLS will be discussed.