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High linearity active GaN-HEMT down-converter MMIC for E-band radar applications

 
: Kallfass, I.; Eren, G.; Weber, R.; Wagner, S.; Schwantuschke, D.; Quay, R.; Ambacher, O.

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IEEE Microwave Theory and Techniques Society; European Microwave Association; Institute of Electrical and Electronics Engineers -IEEE-:
9th European Microwave Integrated Circuits Conference, EuMIC 2014. Proceedings : 06-07 October 2014, Italy, Rome, EuMW 2014, European Microwave Week
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5473-5
ISBN: 978-2-87487-036-1
S.128-131
European Microwave Integrated Circuits Conference (EuMIC) <9, 2014, Rome>
European Microwave Week (EuMW) <17, 2014, Rome>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
A down-converter MMIC in 100 nm gate length AlGaN/GaN HEMT technology achieves an input-related 1-dB compression point of 13 dBm at a center frequency of 77 GHz, providing high linearity for radar applications. The single-ended fundamental mixer without pre- or post-amplification shows 8 dB conversion loss when driven with 13dBm of LO power within an RF frequency range exceeding 75 to 81 GHz. The high linearity is achieved by operating the GaN transistor as active transconductance mixer, allowing for a high voltage swing of the RF signal even when using a relatively small transistor size as required by the high operating frequency.

: http://publica.fraunhofer.de/dokumente/N-313376.html