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Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition

 
: Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.

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IEEE Microwave Theory and Techniques Society; European Microwave Association; Institute of Electrical and Electronics Engineers -IEEE-:
9th European Microwave Integrated Circuits Conference, EuMIC 2014. Proceedings : 06-07 October 2014, Italy, Rome, EuMW 2014, European Microwave Week
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5473-5
ISBN: 978-2-87487-036-1
S.202-205
European Microwave Integrated Circuits Conference (EuMIC) <9, 2014, Rome>
European Microwave Week (EuMW) <17, 2014, Rome>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
AlGaN/GaN HEMT modeling; analytical models; parameter extraction; model verification

Abstract
Modern analytic large-signal equivalent circuit models of microwave III-V active devices such as high electron mobility transistors (HEMTs) normally require a large effort in two-dimensional (2D) data fitting and extraction of parameter sets for numerical functions. In this paper, an entire automatic extraction procedure is proposed which relies on a decomposition of numerical function data into one-dimensional spurs and a subsequent starting value estimation and optional preoptimization and final 2D fitting without user interaction. As a first validation, the fitting quality of the automatic procedure is demonstrated for two advanced AlGaN/GaN HEMT technologies with different gate lengths of 0.25 µm und 0.1 µm.

: http://publica.fraunhofer.de/dokumente/N-313374.html