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Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect

Einfluss des Fabrikationsprozesses auf die elektrischen Eigenschaften und die Konzentration von Zuständen an der Grenzschicht in 4H-SiC n-MOSFETs aus Halleffektuntersuchungen
 
: Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena

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Zielinski, Marcin:
HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France
Dürnten: Trans Tech Publications, 2014 (Materials Science Forum 806)
ISBN: 978-3-03835-294-5 (Print)
ISBN: 978-3-03795-990-9 (CD-ROM)
ISBN: 978-3-03826-678-5 (eBook)
S.127-132
International Workshop on Silicon Carbide Hetero-Epitaxy (HeteroSiC) <5, 2013, Nice>
Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (WASMPE) <2013, Nice>
Bundesministerium für Bildung und Forschung BMBF
Program Inter Carnot Fraunhofer (PICF); 01SF0804; MobiSiC
Englisch
Konferenzbeitrag
Fraunhofer IISB ()
4H-SiC MOSFETs; hall mobility; inversion carrier density; density of interface traps

Abstract
In this work, electrical properties of lateral n-channel MOSFETs implanted with different nitrogen doses in the channel region were measured by Hall-effect technique at 300K. A mobility improvement with increasing nitrogen implantation doses is observed. Interface trap density (Dit) was determined from the experimentally measured Hall carrier density. Our results show a high Dit near and within the conduction band that does not change significantly when the nitrogen implantation dose is increased, despite observed mobility improvement.

: http://publica.fraunhofer.de/dokumente/N-313312.html