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Metamorphic 94 GHz power amplifier MMICs

94 GHz Leistungsverstärker MMICs auf metamorpher HEMT Technologie
: Tessmann, A.; Leuther, A.; Schwörer, C.; Massler, H.


IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium Digest 2005. CD-ROM
Piscataway, NJ: IEEE, 2005
International Microwave Symposium (IMS) <2005, Long Beach/Calif.>
Fraunhofer IAF ()
metamorphic high electron mobility transistor; metamorpher Transistor mit hoher Elektronenbeweglichkeit; MHEMT; W-Band; coplanar waveguide; koplanare Wellenleiter; power amplifier; Leistungsverstärker

In this paper, we present the development of two 94 GHz power amplifier MMICs for use in high-resolution synthetic aperture radar (SAR) systems. The amplifier circuits have been realized using a 0.1 mu m InAlAs/InGaAs based depletion type metamorphic high electron mobility transistor (MHEMT) technology in combination with coplanar circuit topology and dual-gate transistors, thus leading to an excellent power and gain performance at millimeter-wave frequencies. The realized two-stage driver amplifier (MPA) MMIC exhibited a small-signal gain of 16 dB and a saturated output power of 20.5 dBm at 94 GHz with a total gate width of 0.72 mm in the output stage. The two-stage high power amplifier (HPA) circuit achieved a linear gain of 10 dB and a saturated output power of 23.3 dBm with a total output periphery of 1.44 mm.