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InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth

Wanderwellenverstärker aus InP-BHBTs mit Bandbreiten größer als 80 GHz
 
: Schneider, K.; Driad, R.; Makon, R.E.; Tessmann, A.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G.

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IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium Digest 2005. CD-ROM
Piscataway, NJ: IEEE, 2005
S.1591-1593
International Microwave Symposium (IMS) <2005, Long Beach/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
bipolar transistor amplifier; Bipolar Transistor Verstärker; distributed amplifier; verteilter Verstärker; heterojunction bipolar transistor; Wanderwellenverstärker; HBT; indium compounds; Indium-Verbindung

Abstract
Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs Double Heterojunction Bipolar Transistor (DHBT) technology. A choice of two amplifiers is presented. The amplifiers achieve a 3-dB bandwidth of 85 GHz and 101 GHz and a gain of 10.5 dB and 9.5 dB, respectively. Both show an excellent input matching over the entire bandwidth and an output matching of better than -10 dB up to 85 GHz. The group delay, which is calculated from measured S-Parameters, is flat up to 80 GHz.

: http://publica.fraunhofer.de/dokumente/N-31330.html