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Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer

Wachstum von AlGaN/GaN basierten elektronischen Bauelementstrukturen mit semiisolierendem GaN-Puffer und AlN Zwischenschicht
 
: Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L.

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Physica status solidi. C 2 (2005), Nr.7, S.2639-2642
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
AlGaN; GaN; HEMT; semi-insulating; semi-isolierend; buffer; Puffer; AlN; HPA

Abstract
Heterostructures of GaN/AlGaN for power applications are grown by metal organic vapor phase epitaxy in a multiwafer reactor on sapphire and SiC substrates. The insulating properties of the GaN buffer and the influence of an AlN interlayer on the two-dimensional electron gas transport properties of high electron mobility transistor structures have been studied. By optimizing the growth conditions the resistivity could be increased to 10(exp 11) ohmcm. For GaN/AlGaN heterostructures on sapphire with a 1 nm AlN interlayer a room temperature mobility of 1780 cm2/Vs and an electron sheet carrier density of 1.2x10(exp 13) cm-2 were achieved. Power devices were fabricated on s.i. SiC showing a power density of 4.9 W/mm at 10 GHz for a multifinger transistor with a gate width of 1 mm.

: http://publica.fraunhofer.de/dokumente/N-31295.html