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Empirical BEOL-TDDB evaluation based on I(t)-trace analysis

: Aubel, Oliver; Beyer, Armand; Talut, Georg; Gall, Martin


Microelectronics reliability 54 (2014), Nr.9-10, S.1671-1674
ISSN: 0026-2714
European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) <25, 2014, Berlin>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IKTS ()
BEOL-TDDB; It-trace; breakdown characteristics

In this paper we are proposing a comprehensive approach of analyzing I(t)-traces generated during BEOL-TDDB (Time Dependent Dielectric Breakdown) investigations. The relations of the initial leakage, the shape of the I(t)-trace and the voltage dependence of the components are discussed. Clear voltage and area dependence could be found. The TDDB lifetime itself and also the transition point of the two I(t)-trace components describes the TDDB voltage acceleration very well. Additionally the review of the breakdown charge gives evidence that only one component is responsible for the TDDB breakdown behavior. This empirical evaluation delivers a different view on the I(t)-trace shapes leading to better understanding of its contributions to the TDDB behavior.