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A-SIO:H thin films with increased light induced degradation stability for thin film silicon solar cells

: Holinski, S.

Volltext urn:nbn:de:0011-n-3112815 (284 KByte PDF)
MD5 Fingerprint: acc113fa7cb7d6b6f10ec4d2e049e01b
Erstellt am: 5.11.2014

Bokhoven, T.P. ; European Commission:
29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 : Proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014, DVD
München: WIP, 2014
ISBN: 3-936338-34-5
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <29, 2014, Amsterdam>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; amorphe Silicium-Stapelsolarzelle; a-SiO:H; silicon; solar cell; film solar cell

Silicon based multi-junction thin film solar cells suffer from light-induced degradation (LID) due to the Staebler-Wronski effect. The top-absorber in such a cell is usually made out of intrinsic amorphous silicon (i)a-Si:H which suffers most from LID. Intrinsic amorphous silicon oxide (i)a-SiO:H promises an increased LID stability. We deposited (i)a-SiO:H absorber layers with different ratios of CO2/SiH4 by radio frequency plasma enhanced chemical vapour deposition (RF-PECVD). The (i)a-SiO:H absorber layers were characterized regarding to their electrical and optical properties. The defect density Nd has been determined by the constant photocurrent method (CPM). It was found that (i)a-SiO:H has an increased LID stability compared to a-Si:H. The measurement results were then transferred into the simulation software Advanced Semiconductor Analysis (ASA). We carried out simulations for the initial and light soaked state of solar cells with a reference (i)a-Si:H absorber layer and the new (i)a-SiO:H absorber layer. The cells showed after light soaking nearly equal efficiency.