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Optimization of InGaAs/InAlAs APDs for SWIR detection with demand for high gain and low breakdown voltage

: Kleinow, P.; Rutz, F.; Aidam, R.; Bronner, W.; Heussen, H.; Walther, M.


Huckridge, D.A. (Ed.) ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Electro-Optical and Infrared Systems: Technology and Applications XI : 22 - 25 September 2014, Amsterdam, Netherlands
Bellingham, WA: SPIE, 2014 (Proceedings of SPIE 9249)
ISBN: 978-1-62841-312-0
Paper 92490X, 7 S.
Conference "Electro-Optical and Infrared Systems - Technology and Applications" <11, 2014, Amsterdam>
Fraunhofer IAF ()
InGaAs; short-wave infrared; SWIR; avalanche photodiode; detector; APD; imaging

We report on the development and optimization of mesa-processed InGaAs/InAlAs avalanche photodiodes (APD) for short-wave infrared applications with demand for high gain and low breakdown voltage. The APDs were grown by molecular beam epitaxy. Dark and photo current measurements of fully processed APDs reveal high dynamic range of 10(4) and gain larger than 40 for 25 V reverse bias voltage and cooled operation at 140 K. A maximum gain larger than 300 is demonstrated for room temperature as well as 140 K. Two different approaches to determine the gain of the APD structures are discussed.