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Simultaneous simulation of systematic and stochastic process variations

 
: Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David

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Volltext (PDF; )

Japan Society of Applied Physics -JSAP-; IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014. Proceedings : Yokohama, Japan, 9 - 11 September 2014
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5288-5
ISBN: 978-1-4799-5289-2
ISBN: 978-1-4799-5287-8
S.289-292
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <19, 2014, Yokohama>
European Commission EC
FP7; 318458; SUPERTHEME
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
process variations; systematic variations; statistical variations; lithography; etching; Equipment Simulation; process simulation; device simulation

Abstract
An efficient approach is presented and demonstrated which enables the simultaneous simulation of the impact of several sources of process variations, ranging from equipment-induced to stochastic ones, which are caused by the granularity of matter. Own software is combined with third party tools to establish a hierarchical simulation sequence from equipment to circuit level. Correlations which occur because some sources of variability affect different devices and different device quantities can be rigorously studied.

: http://publica.fraunhofer.de/dokumente/N-309262.html