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Improved AlGaN p-i-n photodetectors for monitoring of ultraviolet radiation

: Albrecht, B.; Kopta, S.; John, O.; Rütters, Martin; Kunzer, M.; Driad, R.; Marenco, N.; Köhler, K.; Walther, M.; Ambacher, O.


IEEE Journal of Selected Topics in Quantum Electronics 20 (2014), Nr.6, Art. 3802507, 7 S.
ISSN: 1077-260X
Fraunhofer IAF ()
Fraunhofer IFAM ()
Fraunhofer ISIT ()
Aluminium gallium nitride (Al(x)Ga(1-x)N); p-i-n diodes; semiconductor epitaxial layers; ultraviolet (UV) photodetectors

Improved aluminum-gallium-nitride (Al(x)Ga(1-x)N) p-i-n photodetectors with different active regions are reported, designed for the measurement of UV-A (315 to 380 nm), UV-B (280 to 315 nm), and UV-C (< 280 nm) radiation. The spectral responsivity of Al(x)Ga(1-x)N photodetectors can be tailored by bandgap engineering of the Al(x)Ga(1-x)N layers and integration of filter layers. Intrinsically visible-blind p-i-n photodetectors are measured on-wafer and packaged in TO-18 headers. Photocurrent measurements in photovoltaic mode result in responsivity values of up to 0.21 A/W for UV-A (EQE = 70%), 0.14 A/W for UV-B (EQE = 56%), and 0.11 A/W for UV-C (EQE = 57%), respectively. The room temperature dark current density values as low as 30 pA/cm(2) at a reverse bias of -3 V yield a specific detectivity of more than 4 × 10(14) cm Hz(0.5)/W. Response time data of the p-i-n photodiodes indicate a rise time of 1.7 ns and a fall time (1/e) of 4.5 ns.Long-term stability tests over 1000 h at an irradiance of 5W/cm(2) demonstrate the potential of these photodetectors for demanding applications such as the continuous monitoring of high irradiance ultraviolet light sources.