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New cost effective ZnO:Al films deposited by large area reactive magnetron sputtering

 
: Sittinger, V.; Szyszka, B.; Hong, R.J.; Werner, W.; Ruske, M.; Lopp, A.

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.A : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-0-3
S.503-506
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
Englisch
Konferenzbeitrag
Fraunhofer IST ()

Abstract
Al-doped ZnO (ZnO:Al or AZO) films have successfully been fabricated on large area glass substrates by sputtering Zn-Al metallic targets (Al content 1-2 wt%) in an in-line reactive mid-frequency (MF) magnetron sputtering process. A new target technology (CleanMag/spl trade/) based on moving magnets as well as conventional target technology (TwinMag/spl trade/) were utilized. The dependence of microstructure and the obtained optical and electrical properties of the AZO films on deposition parameters, such as working gas pressure, sputtering MF power and substrate temperature, was investigated in detail. Best results showed an extinction coefficient k of less than 2 /spl times/ 10/sup -3/ and a resistivity /spl rho/ below 270 /spl mu//spl Omega/cm. At Fraunhofer IST a fairly good homogeneity of /spl plusmn/6% on an area of 1000 /spl times/ 600 mm/sup 2/ was obtained.

: http://publica.fraunhofer.de/dokumente/N-309224.html