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Deep-level defects in high-dose proton implanted and high-temperature annealed silicon

: Jelinek, Moriz; Laven, Johannes G.; Rommel, Mathias; Schustereder, Werner; Schulze, Hans-Joachim; Frey, Lothar; Job, R.


Simoen, E. ; Electrochemical Society -ECS-:
High Purity and High Mobility Semiconductors 13 : ECS and SMEQ Joint International Meeting, October 5, 2014 - October 9, 2014, Cancun, Mexico
Pennington, NJ: ECS, 2014 (ECS transactions 64.2014, Nr.11)
ISBN: 978-1-62332-191-8
ISBN: 978-1-60768-548-7
High Purity and High Mobility Semiconductor Symposium <13, 2014, Cancun>
Fraunhofer IISB ()

We review the principal mechanisms of deep-level defect formation after proton irradiation and subsequent annealing of float zone grown crystalline silicon. Various reaction paths commonly related to vacancy-complexes, interstitial oxygen and hydrogen are discussed. In the experimental part DLTS results of proton irradiated pn-diode structures are presented. It appears that some detected defects show a thermal stability differing from that reported in literature. Furthermore the metastability of two defects at 300 meV and 418 meV below the conduction band is examined. This behavior commonly designated to a negative-U defect is for the first time reported in a sample annealed at 350° C.