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2014
Journal Article
Titel
Growth and doping of semipolar GaN grown on patterned sapphire substrates
Abstract
In order to achieve large area semipolar GaN layers with high crystal quality,we have etched trenches into n-plane and r-plane sapphire wafers exposing c-plane-like side-walls, from which GaN stripes can be grown by metalorganic vapor phase epitaxy mainly in c-direction, forming semipolar {1011} or {1122} surfaces after coalescence. Here, we describe how to improve such layers by optimizing the side- facet orientation and by including a SiN nanomask interlayer in situ into the growth process, eventually resulting in a basal plane stacking fault density below 5x10(3) cm(-1). Moreover, doping experiments have revealed a substantially lower Mg incorporation efficiency on the {1122} surface as compared to the c-plane,whereas Si does not show such differences.
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