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Backside illuminated wafer-to-wafer bonding single photon avalanche diode array

Design, fabrication and preliminary tests
: Zou, Yu; Bronzi, Danilo; Villa, Federica; Weyers, Sascha


Institute of Electrical and Electronics Engineers -IEEE-:
PRIME 2014, 10th Conference on Ph.D. Research in Microelectronics & Electronics. Conference Proceedings : June 29th - July 3rd 2014 Grenoble, France
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-4994-6
4 S.
Conference on Ph.D Research in Microelectronics and Electronics (PRIME) <10, 2014, Grenoble>
European Commission EC
FP7-ICT; 257646; MiSPiA
Microelectronic Single-Photon 3D Imaging Arrays\nfor low-light high-speed Safety and Security Applications
Fraunhofer IMS ()
Single-photon avalanche diode (SPAD); backside illumination; near-infrared (NIR); indirect time-of-flight; wafer-to-wafer bonding; silicon-on-insulator

We present an innovative sensor chip, exploiting backside illumination of a silicon-on-insulator (SOI) wafer integrating custom single photon avalanche diodes (SPADs), flipped and wafer-bonded on a standard CMOS wafer integrating the analog front-end circuit, in-pixel digital processing and readout electronics. Two major improvements are achieved: higher pixel density and fill-factor, since these detectors are placed on the top of the corresponding smart-pixel electronics, instead of being placed side-by-side (as in planar structures); enhanced spectral sensitivity in the near-infrared, up to 1 μm wavelength, thanks to thicker active volume within the SOI detector wafer and to the backside illumination of the active area.