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A monolithic integrated mHEMT chipset for high-resolution submillimeter-wave radar applications

: Tessmann, A.; Leuther, A.; Massler, H.; Lewark, U.J.; Wagner, S.; Weber, R.; Kuri, M.; Zink, M.; Riessle, M.; Stulz, H.P.; Schlechtweg, M.; Ambacher, O.; Sommer, R.; Wahlen, A.; Stanko, S.


IEEE Electron Devices Society; IEEE Solid-State Circuits Society; IEEE Microwave Theory and Techniques Society:
35th IEEE Compound Semiconductor Integrated Cicuit Symposium, CSIC 2013 : Oct 13th - Oct 16th, 2013, Monterey, California, USA
New York, NY: IEEE, 2013
ISBN: 978-1-4799-0581-2
ISBN: 978-1-4799-0583-6
4 S.
Compound Semiconductor Integrated Cicuit Symposium (CSIC) <35, 2013, Monterey/Calif.>
Fraunhofer IAF ()
Fraunhofer FHR ()
frequency multiplier; H-band; heterodyne receiver; high power amplifier (HPA); low-noise amplifier (LNA); medium power amplifier (MPA); metamorphic high electron mobility transistor (mHEMT); submillimeter-wave monolithic integrated circuit (S-MMIC); inverse synthetic aperture radar (ISAR)

In this paper, we present the development of a millimeter-wave monolithic integrated circuit (MMIC) chipset for use in a high-resolution radar system operating at 300 GHz. The chipset consists of a frequency multiplier by twelve, a medium power amplifier, a high power amplifier and a fully integrated 300 GHz heterodyne receiver MMIC. The frequency multiplier and the two amplifier circuits have been realized using a 100 nm InAlAs/InGaAs base depletion-type metamorphic high electron mobility transistor (mHEMT) technology and achieve a saturated output power of approximately 20 dBm between 90 and 105 GHz. The 300 GHz receiver S-MMIC was fabricated using a more advanced 35 nm mHEMT technology and demonstrates a conversion gain of more than 7 dB between 270 and 325 GHz. All circuits were successfully packaged into millimeter-wave waveguide modules and used to realize a compact 300 GHz radar demonstrator, which delivers an instantaneous bandwidth of 40 GHz together with an outstanding range resolution of 3.7 mm.