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Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride - Technology and piezoelectric properties

: Stoeckel, C.; Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.


Journal of applied physics 116 (2014), Nr.3, Art. 034102, 7 S.
ISSN: 0021-8979
ISSN: 1089-7550
Fraunhofer ENAS ()

Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d(31) is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d(33).