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Evaluation and signal conditioning of piezoresistive silicon pressure sensor

: Gao, X.; Mackowiak, P.; Mukhopadhyay, B.; Ehrmann, O.; Lang, K.-D.; Ngo, H.-D.


Yarlagadd, P.:
Advances in Measurements and Information Technologies : International Conference on Sensors Instrument and Information Technology, ICSIIT 2014, held in Guangzhou, on 18-19 January 2014
Dürnten: Trans Tech Publications, 2014 (Applied mechanics and materials 530-531)
ISBN: 978-3-03835-039-2
International Conference on Sensors Instrument and Information Technology (ICSIIT) <2014, Guangzhou>
Fraunhofer IZM ()

The piezoresistive silicon pressure sensor used in this work is developed by Technical University Berlin. It is mainly composed of a silicon-membrane and four implanted piezoresistors connected in form of a Wheatstone bridge. After wire bonding, the sensor was evaluated in a climate cabinet at different temperatures and pressures. The characteristic curve of the sensor shows its good linearity and strong dependence on the temperature. The sensor's temperature coefficient of sensitivity and zero shift were compensated using ASIC MLX90308. The experimental results show that this method of compensation accurately solved the sensors temperature dependence problems.