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MHEMT G-band low-noise amplifiers

 
: Kärkkäinen, M.; Kantanen, M.; Caujolle-Bert, S.; Varonen, M.; Weber, R.; Leuther, A.; Seelmann-Eggebert, M.; Alanne, A.; Jukkala, P.; Närhi, T.; Halonen, K.A.I.

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IEEE Transactions on Terahertz Science and Technology 4 (2014), Nr.4, S.459-468
ISSN: 2156-342X
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()

Abstract
To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here, the performances of 165 and 183 GHz low-noise amplifier microchips intended for atmospheric water vapor profiling application are reported. The microchips are manufactured in metamorphic high-electron mobility transistor technology having a gate length of 50 nm. The on-wafer measured results show noise figures of 4.4-7.4 dB and 16-25 dB gain at the operating frequencies. In addition, two of the amplifiers were assembled in waveguide packages and the measured results show a gain of 19-20 dB and 7 dB noise figure at both 165 and 183 GHz.

: http://publica.fraunhofer.de/dokumente/N-301632.html