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Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography

: Neubauer, G.; Salamon, M.; Uhlmann, N.; Wellmann, P.J.


Okumura, H.:
Silicon Carbide and Related Materials 2013. Vol.1 : Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
Dürnten: Trans Tech Publications, 2014 (Materials Science Forum 778-780)
ISBN: 978-3-03835-010-1 (Print)
ISBN: 978-3-03795-705-9 (CD-ROM)
ISBN: 978-3-03835-010-1 (Print + CD-ROM)
ISBN: 978-3-03826-391-3 (eBook)
International Conference on Silicon Carbide and Related Materials (ICSCRM) <15, 2013, Miyazaki>
Fraunhofer IIS ()

In this paper, we present our technique for obtaining a real-time 3-D volume shape of the SiC crystal using X-ray computed tomography (CT). In particular, it is possible to determine in-situ the shape of the growth interface with high precision at growth temperatures above 2000 °C in a conventional 3 physical vapor transport (PVT) growth system. We show that the size and shape of a facet can be monitored at different stages during growth and furthermore the crystal's face boundary can be determined with high precision throughout the whole growth process. Real-time in our case means recording one image sequence within 2 to 15 minutes depending on the quantity and quality of the images.