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Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors

: Noll, S.; Rambach, M.; Grieb, M.; Scholten, D.; Bauer, A.J.; Frey, L.


Okumura, H.:
Silicon carbide and related materials 2013. Vol.2 : Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials 2013, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
Durnten-Zurich: Trans Tech Publications, 2014 (Materials Science Forum 778-780)
ISBN: 978-3-03835-010-1
ISBN: 978-3-03826-391-3
International Conference on Silicon Carbide and Related Materials (ICSCRM) <15, 2013, Miyazaki>
Fraunhofer IISB ()

A high inversion channel mobility is a key parameter of normally off Silicon-Carbide MOS field effect power transistors. The mobility is limited by scattering centers at the interface between the semiconductor and the gate-oxide. In this work we investigate the mobility of lateral normally-off MOSFETs with different p-doping concentrations in the channel. Additionally the effect of a shallow counter n-doping at the interface on the mobility was determined and, finally, the properties of interface traps with the charge pumping method were examined. A lower p-doping in the cannel reduces the threshold voltage and increases the mobility simultaneously. A shallow counter n-doping shows a similar effect, but differences in the behavior of the charge pumping current can be observed, indicating that the nitrogen has a significant effect on the electrical properties of the interface, too.