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ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM

: Triyoso, D.H.; Weinreich, W.; Seidel, K.; Nolan, M.G.; Polakowski, P.; Utess, D.; Ohsiek, S.; Dittmar, K.; Weisheit, M.; Liebau, M.; Fox, R.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
IEEE International Conference on IC Design & Technology, ICICDT 2014 : 28-30 May 2014, Austin, Texas, USA
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-2153-9
4 S.
International Conference on IC Design & Technology (ICICDT) <2014, Austin/Tex.>
Fraunhofer IPMS ()

Decoupling MIM capacitors are typically implemented to reduce power supply noise. In this work we reported characterization of Atomic Layer Deposited (ALD) Ta2O5 and Hf-doped Ta2O5 high-k MIM capacitors. We investigated the impact of precursor choice and HfO2 addition on material, electrical and reliability characteristics of MIM capacitors. We demonstrated MIM capacitors with high capacitance density, low leakage and excellent reliability which are also suitable for BEOL integration.