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Simulation for statistical variability in realistic 20nm MOSFET

 
: Wang, L.; Brown, A.R.; Millar, C.; Burenkov, A.; Wang, X.; Asenov, A.; Lorenz, J.

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Institute of Electrical and Electronics Engineers -IEEE-:
15th International Conference on Ultimate Integration on Silicon, ULIS 2014 : 7-9 April 2014, Stockholm, Sweden
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3718-9
S.5-8
International Conference on Ultimate Integration on Silicon (ULIS) <15, 2014, Stockholm>
Englisch
Konferenzbeitrag
Fraunhofer IISB ()

Abstract
In order to enable the simulation of statistical variability simulation in non-ideal device structures which arise from complex patterning steps, the GSS atomistic simulator, GARAND, has been enhanced for handling arbitrary 3D device geometries, and a structure translation tool MONOLITH has been developed to transfer the information about the device geometry, material composition and doping distribution into an intermediate structure and file format which can then be imported by GARAND. Statistical simulations on an example of a 20nm bulk Silicon MOSFET with STI are demonstrated.

: http://publica.fraunhofer.de/dokumente/N-301128.html