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Precise determination of piezoelectric longitudinal charge coefficients for piezoelectric thin films assisted by finite element modeling

 
: Stoeckel, C.; Kaufmann, C.; Schulze, R.; Billep, D.; Gessner, T.

:

Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 : 21-25 July 2013, Prague
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4673-5996-2
S.194-196
International Symposium on Applications of Ferroelectric (ISAF) <2013, Prague>
Workshop on Piezoresponse Force Microscopy (PFM) <2013, Prague>
Englisch
Konferenzbeitrag
Fraunhofer ENAS ()

Abstract
A determination method to identify the piezoelectric longitudinal charge coefficient d33 for thin films on substrate is presented. Finite Element (FE) simulations and measurements at PZT on bulk silicon show correlations of the substrate characteristics and electrode size subject to the displacement of an electric actuated piezoelectric material. FE models are used to identify the d33 independent of the substrate and electrode characteristic. Thereby the piezoelectric longitudinal charge coefficient of 1.1 m PLD deposited Pb(Zr0.52Ti0.48)O3 (PZT) is calculated d33 = 272.5 pm/V and a small standard deviation of = 4 pm/V for different sample geometries is analyzed.

: http://publica.fraunhofer.de/dokumente/N-300980.html