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The distribution of interstitial iron at dislocation clusters at elevated temperature

: Zierer, R.; Kaden, T.; Würzner, S.; Möller, H.J.

Postprint (PDF; )

Energy Procedia 38 (2013), S.649-657
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <3, 2013, Hameln>
Zeitschriftenaufsatz, Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
Fraunhofer ISE ()

Differences of the iron-boron (FeB) concentration at dislocation clusters could be observed using a microwave detected photoconductivity (MDP) and a surface photovoltage measurement (SPV) system, respectively. This could be explained by reduced minority carrier mobility in these areas. The FeB concentration was correlated with the dislocation density after annealing at 800°C and 750°C, which show no clear trend but a tendency between higher FeB concentration and high dislocation density.