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Power scaling of narrow-linewidth 2μm GaSb-based semiconductor disk laser

: Kaspar, S.; Rattunde, M.; Adler, S.; Topper, T.; Manz, C.; Kohler, K.; Wagner, J.


Institute of Electrical and Electronics Engineers -IEEE-:
Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference, CLEO®/Europe-IQEC 2013 : 12-16 May 2013, Munich, Germany
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-0593-5 (Print)
ISBN: 978-1-4799-0594-2
1 S.
Conference on Lasers and Electro-Optics (CLEO Europe) <2013, Munich>
International Quantum Electronics Conference (IQEC) <2013, Munich>
Fraunhofer IAF ()

In recent years, optically pumped semiconductor disk lasers (SDLs) have attracted considerable interest, since they deliver simultaneously high output power and excellent beam quality [1]. Recently, the realization of high-performance SDLs based on the (AlGaIn)(AsSb) material system with emission wavelengths ranging from 1.8 to 2.8 m has been reported [2-3]. Room-temperature output powers of up to 4.2 W [4] have been demonstrated recently, making this laser source interesting for direct applications such as medical therapy or materials processing. Further applications in this wavelength regime such as high-resolution spectroscopy, long-range gas sensing, LIDAR and free-space optical data transmission via phase modulation require single-mode narrow-linewidth (kHz range) emission and output powers in the 0.1-1 W range. Higher output powers are a clear benefit since, e.g. in data transmission, fewer, or even no subsequent power amplifier stages will be required. A typical benchmark for amplifier-free airborne communications is 1 W at <100 kHz linewidth.