Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

32 µW pulsed terahertz emission from high mobility InAlAs/InGaAs multi-nanolayer structures

 
: Dietz, R.J.B.; Globisch, B.; Gerhard, M.; Stanze, D.; Koch, M.; Sartorius, B.; Göbel, T.; Schell, M.

:

Optical Society of America -OSA-, Washington/D.C.:
CLEO: QELS Fundamental Science : 9.-14.6.2013, San Jose, CA, USA
Washington, DC: OSA, 2013 (OSA technical digest series)
ISBN: 978-1-55752-972-5
Art.CW3K.2
Conference on Lasers and Electro Optics (CLEO) <2013, San Jose/Calif.>
Quantum Electronics and Laser Science - Fundamental Science Conference (QELS) <2013, San Jose/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
We measured pulsed THz emission from high-mobility MBE grown InGaAs/InAlAs multi-nanolayer structures. The detected average THz power was 32 W at 32 mW optical excitation power. The bandwidth of the THz pulses exceeds 4 THz. OCIS codes: (300.6495) Spectroscopy, terahertz; (160.5140) Photoconductive materials.

: http://publica.fraunhofer.de/dokumente/N-300602.html