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A G-band cascode MHEMT medium power amplifier

: Campos-Roca, Y.; Tessmann, A.; Hurm, V.; Massler, H.; Seelmann-Eggebert, M.; Leuther, A.


IEEE Microwave Theory and Techniques Society; Fraunhofer-Institut für Physikalische Messtechnik -IPM-, Freiburg/Brsg.:
38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013 : Mainz, Germany, 1 - 6 September 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4673-4717-4 (online)
ISBN: 978-1-4673-4715-0 (print)
2 S.
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) <38, 2013, Mainz>
Fraunhofer IAF ()

A balanced amplifier has been designed and fabricated. The monolithic millimeter-wave integrated circuit (MMIC) has been realized in a 35-nm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) process in grounded coplanar waveguide (GCPW) technology. It demonstrates a measured small-signal gain better than 19 dB between 180 and 200 GHz. The measured saturated output power achieves a maximum value of 10.2 dBm between 180 and 190 GHz.