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Superfluorescent 1.1 ps pulse-on-demand generation in InGaN laser

: Boiko, D.L.; Zeng, X.; Weig, T.; Schwarz, U.T.; Sulmoni, L.; Lamy, J.-M.; Grandjean, N.


Institute of Electrical and Electronics Engineers -IEEE-:
Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference, CLEO®/Europe-IQEC 2013 : 12-16 May 2013, Munich, Germany
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-0593-5 (Print)
ISBN: 978-1-4799-0594-2
1 S.
Conference on Lasers and Electro-Optics (CLEO Europe) <2013, Munich>
International Quantum Electronics Conference (IQEC) <2013, Munich>
Fraunhofer IAF ()

A semiconductor laser diode producing ultra-short optical pulses in the blue-violet range will find numerous applications ranging from next-generation 3D optical data storage devices to bio-medical diagnostic methods. In this communication we report generation of solitary pulses of the width below 1.1 ps from a tandem-cavity InGaN/InGaN laser diodes operating in 415-425 nm wavelength range. Solitary pulses are produced in the pulse-on-demand mode within narrow transient region between amplified spontaneous emission (ASE) and Q-switched lasing (LAS). The pulses exhibit large jitter. This regime is achieved when high negative bias -20 V was applied to the central section of the device (saturable electroabsorber) while to end sections were pumped with 1 A current pulses.