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Hall effect measurement system for characterization of doped single crystal diamond

: Berkun, I.; Demlow, S.N.; Suwanmonkha, N.; Hogan, T.P.; Grotjohn, T.A.


Zhou, Y.:
Diamond electronics and biotechnology: fundamentals to applications VI : November 25 - 30, 2012, Boston, Massachusetts, USA
Cambridge: Cambridge University Press, 2013 (MRS symposium proceedings 1511)
ISBN: 978-1-63266-104-3
Symposium EE "Diamond Electronics and Biotechnology - Fundamentals to Applications" <6, 2012, Boston/Mass.>
Materials Research Society (Fall Meeting) <2012, Boston/Mass.>
Fraunhofer CCL ()

A temperature dependent Hall Effect measurement system with software based data acquisition and control was built and tested. Transport measurements are shown for boron-doped single crystal diamond (SCD) films deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor. The influence of Ohmic contacts and temperature control accuracy are studied. For a temperature range of 300K-700K IV curves, Hall mobilities and carrier concentrations are presented.