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Comparison of direct growth and wafer bonding for the fabrication of GaInP/GaAs dual-junction solar cells on silicon

: Dimroth, F.; Roesener, T.; Essig, S.; Weuffen, C.; Wekkeli, A.; Oliva, E.; Siefer, G.; Volz, K.; Hannappel, T.; Häussler, D.; Jäger, W.; Bett, A.W.


IEEE Journal of Photovoltaics 4 (2014), Nr.2, S.620-625
ISSN: 2156-3381
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; bonding; Silicium

Two different process technologies were investigated for the fabrication of high-efficiency GaInP/GaAs dual-junction solar cells on silicon: direct epitaxial growth and layer transfer combined with semiconductor wafer bonding. The intention of this research is to combine the advantages of high efficiencies in III-V tandem solar cells with the low cost of silicon. Direct epitaxial growth of a GaInP/GaAs dual-junction solar cell on a GaAsyP1-y buffer on silicon yielded a 1-sun efficiency of 16.4% (AM1.5g). Threading dislocations that result from the 4% lattice grading are still the main limitation to the device performance. In contrast, similar devices fabricated by semiconductor wafer bonding on n-type inactive Si reached efficiencies of 26.0% (AM1.5g) for a 4-cm2 solar cell device.