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Comparison of direct growth and wafer bonding for the fabrication of GaInP/GaAs dual-junction solar cells on silicon

 
: Dimroth, Frank; Roesener, Tobias; Essig, Stephanie; Weuffen, Christoph; Wekkeli, Alexander; Oliva, Eduard; Siefer, Gerald; Volz, Kerstin; Hannappel, Thomas; Häussler, Dietrich; Jäger, Wolfgang; Bett, Andreas W.

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Postprint urn:nbn:de:0011-n-2984118 (595 KByte PDF)
MD5 Fingerprint: 6fd0ce21bc5a8270e9bde307bb6de83d
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Erstellt am: 18.1.2019


IEEE Journal of Photovoltaics 4 (2014), Nr.2, S.620-625
ISSN: 2156-3381
ISSN: 2156-3403
European Commission EC
FP7-Energy; 283798; NGCPV
A new generation of concentrator photovoltaic cells, modules and systems
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
03SF0329A; III–V-Si
Hocheffiziente III-V Solarzellen auf Silicium
Englisch
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; bonding; Silicium; wafer bonding; III-V auf Silicium

Abstract
Two different process technologies were investigated for the fabrication of high-efficiency GaInP/GaAs dual-junction solar cells on silicon: direct epitaxial growth and layer transfer combined with semiconductor wafer bonding. The intention of this research is to combine the advantages of high efficiencies in III-V tandem solar cells with the low cost of silicon. Direct epitaxial growth of a GaInP/GaAs dual-junction solar cell on a GaAsyP1-y buffer on silicon yielded a 1-sun efficiency of 16.4% (AM1.5g). Threading dislocations that result from the 4% lattice grading are still the main limitation to the device performance. In contrast, similar devices fabricated by semiconductor wafer bonding on n-type inactive Si reached efficiencies of 26.0% (AM1.5g) for a 4-cm2 solar cell device.

: http://publica.fraunhofer.de/dokumente/N-298411.html