Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications

: Polakowski, Patrick; Riedel, Stefan; Weinreich, Wenke; Rudolf, M.; Sundqvist, Jonas; Seidel, Konrad; Müller, Johannes


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 6th International Memory Workshop, IMW 2014 : 18-21 May 2014, Taipei, Taiwan
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3594-9 (Print)
ISBN: 978-1-4799-3596-3
4 S.
International Memory Workshop (IMW) <6, 2014, Taipei>
Fraunhofer IPMS ()
3D; FRAM; ferroelectric; hafnium oxide; nonvolatile memory; trench

Aiming for future nonvolatile memory applications the fabrication and electrical characterization of 3-dimensional trench capacitors based on ferroelectric HfO2 is reported. It will be shown that the ferroelectric properties of Al-doped HfO2 ultrathin films are preserved when integrated into 3-dimensional geometries. The Al:HfO2 thin films were deposited by ALD and electrical data were collected on trench capacitor arrays with a trench count up to 100k. Stable ferroelectric switching behavior was observed for all trench arrays fabricated and only minimal remanent polarization loss with increasing 3-dimensional area gain was observed. In addition these arrays were found to withstand 2 *109 endurance cycles at saturated hysteresis loops. With these report the 3D capability of ferroelectric HfO2 is confirmed and for the first time a feasible solution for the vertical integration of ferroelectric 1T/1C as well as 1T memories is presented.