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ALD ZrO2 processes for BEoL device applications

: Weinreich, Wenke; Seidel, Konrad; Polakowski, Patrick; Riedel, Stefan; Wilde, Lutz; Sundqvist, Jonas; Triyoso, Dina H.; Nolan, Mark G.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
IEEE International Conference on IC Design & Technology, ICICDT 2014 : 28-30 May 2014, Austin, Texas, USA
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-2153-9
4 S.
International Conference on IC Design & Technology (ICICDT) <2014, Austin/Tex.>
Fraunhofer IPMS ()
BEoL application; MIM capacitors; atomic layer deposition

In this paper three different ZrO2 ALD processes are studied as high-k dielectric in BEoL device applications. One metal organic precursor is compared to a halide precursor used with two different oxidizing agents. The structure, composition and morphology of the films are analyzed on bare Si wafers and the electrical properties such as capacitance, leakage and reliability are investigated on fully integrated BEoL decoupling capacitors. One of the halide ALD processes is identified as the most promising candidate for BEoL capacitor applications.