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Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters

Simulation von InAlAs/InGaAs High Electron Mobility Transistoren mit einem eindeutigen Satz von physikalischen Parametern
: Quay, R.; Palankovski, V.; Chertouk, M.; Leuther, A.; Selberherr, S.


International Electron Devices Meeting 2000
Piscataway, NJ: IEEE, 2000
ISBN: 0-7803-6438-4
International Electron Devices Meeting <46, 2000, San Francisco/Calif.>
Fraunhofer IAF ()
HEMT; device simulation; Bauelement Simulation; InAlAs; InGaAs; impact ionisation; Stoßionisation; enhancement mode

Simulation results of InAlAs/InGaAs High Electron Mobility Transistors based on both GaAs and InP substrates are presented using the two-dimensional device simulator MINIMOS-NT. Three different HEMT technologies are evaluated by simulation and a single set of physical parameters is verified. The critical interaction of selfheating, impact ionization, SiN surface effects, and material composition is incorporated, which renders the simulation results suitable for the evaluation of device reliability issues. Starting from the analysis of gate-currents the simulation model can quantitatively support the basic understanding of this advanced material system.