Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Industrial application of heterostructure device simulation

Industrielle Anwendung von Heterostruktur Bauelement Simulation
 
: Palankovski, V.; Quay, R.; Selberherr, S.

:

IEEE Electron Devices Society:
22nd GaAs IC Symposium 2000. Technical digest : IEEE Gallium Arsenide Integrated Circuit Symposium. Seattle, Washington, November 5 - 8, 2000
Piscataway, NJ: IEEE, 2000
ISBN: 0-7803-5968-2
ISBN: 0-7803-5969-0
ISBN: 0-7803-5970-4
S.117-120
GaAs IC Symposium <22, 2000, Seattle/Wash.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
HBT; HEMT; heterostructure; Heterostruktur; III-V semiconductor; III-V Halbleiter; simulation tool

Abstract
We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. Results for Heterostructure Bipolar Transistors (HBTs) and for High Electron Mobility Transistors (HEMTs) are presented in good agreement with measured data of industrially relevant devices.

: http://publica.fraunhofer.de/dokumente/N-2978.html