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Room temperature cw operation of GaInAsSb/AlGaAsSb quantum well lasers emitting in the 2.2 to 2.3 µm wavelength range

Raumtemperatur CW-Betrieb von GaInAsSb/AlGaAsSb Quantenfilm-Lasern mit einer Emissionswellenlänge zwischen 2.2 und 2.3 µm
: Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.

Manasreh, M.O.:
Infrared Applications of Semiconductors III
Pittsburgh, Pa.: MRS, 2000 (Materials Research Society symposia proceedings 607)
ISBN: 1-558-99515-3
Symposium on Infrared Applications of Semiconductors <3, 1999, Boston/Mass.>
Materials Research Society (Fall Meeting) <1999, Boston/Mass.>
Fraunhofer IAF ()
mid infrared; mittleres Infrarot; GaSb; GaInAsSb; AlGaAsSb; broadended waveguide; verbreiterte Wellenleiterstruktur; Quantum well; Quantenfilm; semiconductor laser diode; Halbleiterlaserdiode; quantum efficiency; Quanteneffizienz; output power efficiency; threshold current; Schwellstrom; loss coefficient; Verlustkoeffizient; cw-operation; cw-Betrieb; lasing spectra; Laserspektrum

We report on room temperature cw operation of type-I semiconductor quantum well (QW) laser diodes based on the GaInAsSb/AlGaAsSb/GaSb material system emitting beyond 2.2 mu m. Lasing is observed in cw mode up to at least 320 K. A high internal quantum efficiency of 65% and a low internal loss coefficient of 5 cm(exp -1) have been achieved for a single QW (SQW) large optical cavity laser at 280 K. An extrapolated threshold current density for infinite cavity length of 144 A/cm2 and 55 A/cm2 has been deduced for the 3 QW and SQW lasers, respectively, which scales with the number of QWs. A maximum cw light output power of 230 mW at 280 K heatsink temperature was obtained for a 3 QW large optical cavity laser with HR/AR coated mirror facets. mounted substrate-side down.