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SEMICONDUCTOR STRUCTURAL ELEMENT AND METHOD FOR THE PRODUCTION THEREOF

 
: Cimalla, V.; Lebedev, V.

DE 102009024311 A1: 20090605
Deutsch
Patent
Fraunhofer IAF ()

Abstract
The invention relates to a method for producing a semiconductor structural element, in which a one-dimensional electron gas can be developed, comprising the following steps: providing a substrate having a first surface; separating a masking layer having a first surface and a second surface, wherein the second surface of the masking layer is arranged on the first surface of the substrate; etching at least one trench in the masking layer extending to the first surface of the substrate; inserting a semiconductor material in the at least one trench, which contains a group III nitride, or is made thereof, and removing the first masking layer. The invention further relates to a semiconductor structural element produced according to said method.

: http://publica.fraunhofer.de/dokumente/N-296508.html