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Influence of surface roughness on the optical mode profile of GaN-based violet ridge waveguide laser diodes

 
: Holc, K.; Jakob, A.; Weig, T.; Köhler, K.; Ambacher, O.; Schwarz, U.T.

:

Belyanin, A.A. (Ed.) ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Novel In-Plane Semiconductor Lasers XIII : 3–6 February 2014, San Francisco, California, United States
Bellingham, WA: SPIE, 2014 (Proceedings of SPIE 9002)
ISBN: 978-0-8194-9915-8
Paper 90020I
Conference "Novel In-Plane Semiconductor Lasers" <13, 2014, San Francisco/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
GaN; laser diode; surface roughness; far field; waveguide scattering; substrate modes

Abstract
We investigate the influence of the epitaxial layer roughness on the far-field profile of the optical mode in gallium Nitride-based, c-plane ridge waveguide laser diodes. Occasionally, we observe long-range growth instabilities leading to a periodical modulation of the surface. Amplitude and period of this surface roughness is typically on the order of a few 10nm and 20 μm, respectively. Using different characterization techniques, we investigate the influence of the surface roughness on the vertical mode profile along the fast axis in the far-field, in particular the contribution of light scattering at the rough waveguide interfaces, as well as that of substrate modes.

: http://publica.fraunhofer.de/dokumente/N-296461.html