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Complementary HFETs on GaAs with 0.2µm gate length

Komplementäre HFETs auf GaAs mit 0.2µm Gate-Länge
: Leuther, A.; Thiede, A.; Köhler, K.; Jakobus, T.; Weimann, G.

Ploog, K.H.; Tränkle, G.; Weimann, G.:
Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors : Berlin, Germany, 22 - 26 August 1999
Bristol: IOP Publishing, 2000 (Institute of Physics - Conference Series 166)
ISBN: 0-7503-0704-8
International Symposium on Compound Semiconductors (ISCS) <26, 1999, Berlin>
Fraunhofer IAF ()
GaAs; HFET; complementary; komplementär; ring oscillator; Ringoszillator

A new technology for the integration of n- and p-hetero-FETs (HFETs) in complementary circuits on GaAs is presented. Our aim was to develop a complementary GaAs HFET technology using our existing n-HFET process with c-beam exposed gates aligned to alloyed ohmic contacts, without using implanted p- and n-ohmic contacts self aligned to a refractory gate. The devices are based on double quantum well AlGaAs/InGaAs heterostructures grown on 3"-GaAs wafers. The subthreshold slopes of p- and n-HFETs with a gate length of 0.2mu m are 116mV/decade and 84mV/decade, respectively. Ring oscillators with 23 stages achieve gate delays of 32ps and power-delays of 130nW/MHzlstage. Ring oscillators with 229 stages were realized.