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GaAsN interband transitions involving localized and extended states probed by resonant Raman scattering and spectrosopic ellipsometry

Interband-Übergänge in GaAsN unter Beteiligung von lokalisierten und ausgedehnten Zuständen, die mittels resonanter Ramanstreuung und spektroskopischer Ellipsometrie untersucht wurden
 
: Wagner, J.; Köhler, K.; Ganser, P.; Herres, N.

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Applied Physics Letters 77 (2000), Nr.22, S.3592-3594
ISSN: 0003-6951
ISSN: 1077-3118
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
GaAsN; raman spectroscopy; Ramanspektroskopie; resonant Raman scattering; resonante Ramanstreuung; spectroscopic ellipsometry; spektroskopische Ellipsometrie

Abstract
Interband transitions in GaAs, GaAs(1-x)N(x) (0<=x<=0.033), involving a localized resonant N-derived energy level and the GaAs-like L conduction and valence band states, have been studied by resonant Raman scattering and spectroscopic ellipsometry, respectively. Raman scattering by the GaN-like LO2 phonon showed for x about 0.01 a pronounced resonant enhancement for incident photon energies approaching the mostly N-related E+ transition at around 1.8 eV, but not at the E1 and E1+Delta1 interband transitions, reflecting the strongly localized nature of both N-related electronic level and the Ga-N vibrational mode. Spectroscopic ellipsometry, in contrast, being sensitive to the overall dielectric function of the GaAsN, revealed the effect of N incorporation on the GaAs-like E1 and E1+Delta1 interband transitions, which is a high-energy shift with increasing N-content accompanied by a significant broadening.

: http://publica.fraunhofer.de/dokumente/N-2948.html