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Tuning of the optical properties of In-rich In(x)Ga(1-x)N (x=0.82-0.49) alloys by light-ion irradiation at low energy

 
: Luca, M. de; Pettinari, G.; Polimeni, A.; Capizzi, M.; Ciatto, G.; Amidani, L.; Fonda, E.; Boscherini, F.; Filippone, F.; Bonapasta, A.A.; Knübel, A.; Cimalla, V.; Ambacher, O.; Giubertoni, D.; Bersani, M.

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Ihn, T. (Ed.) ; TH Zürich -ETH-:
The physics of semiconductors. 31st International Conference on the Physics of Semiconductors, ICPS 2012. Proceedings : Zurich, Switzerland, 29 July-3 August 2012
New York, N.Y.: AIP Press, 2013 (AIP Conference Proceedings 1566)
ISBN: 978-0-7354-1194-4
ISBN: 978-1-62993-755-7
S.93-94
International Conference on the Physics of Semiconductors (ICPS) <31, 2012, Zürich>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
III-nitrides; photoluminescence; hydrogen in semiconductors; impurities and defects

Abstract
The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich In(x)Ga(1-x)N alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects.

: http://publica.fraunhofer.de/dokumente/N-294639.html