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Q- and E-band amplifier MMICs for satellite communication

 
: Schwantuschke, D.; Aja, B.; Seelmann-Eggebert, M.; Quay, R.; Leuther, A.; Brueckner, P.; Schlechtweg, M.; Mikulla, M.; Kallfass, I.; Ambacher, O.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
International Microwave Symposium, IMS 2014 : 1-6 June 2014, Tampa Bay, Florida
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3868-1
ISBN: 978-1-4799-3869-8
4 S.
International Microwave Symposium (IMS) <2014, Tampa Bay/Fla.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
low-noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); monolothic microwave integrated circuits (MMICs); aluminium gallium nitride; high power amplifiers

Abstract
This work discusses MMICs for the realization of spaceborn multi-Gigabit satellite communication systems. A broadband low-noise amplifier, based on a 50 nm GaAs mHEMT technology, has been developed for Q-band low-noise receivers. The amplifier shows a small-signal gain of 27.5 dB with a gain flatness of ± 1.2 dB and a noise figure below 2 dB over the entire targeted frequency range between 30 and 50 GHz. For the next generation of E-band transmitter modules, a GaN-based highpower amplifier with a small-signal gain above 15 dB between 70-75 GHz and a saturated output power exceeding 28 dBm at 74 GHz has been developed.

: http://publica.fraunhofer.de/dokumente/N-294533.html