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Vacancy defect formation in PA-MBE grown C-doped InN

 
: Prozheeva, V.; Tuomisto, F.; Koblmüller, G.; Speck, J.S.; Knübel, A.; Aidam, R.

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Physica status solidi. C 11 (2014), Nr.3-4, S.530-532
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Conference on Nitride Semiconductors (ICNS) <10, 2013, Washington/DC>
Englisch
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()
InN; vacancies; positron annihilation spectroscopy

Abstract
Positron annihilation spectroscopy has been used to study vacancy defects formed in PA-MBE grown carbondoped indium nitride. The carbon concentration of doped samples varied in the range from 1.5 × 10(17) cm(-3) to 2.5 × 10(18) cm(-3). The experimental data indicates the existence of vacancy complexes containing both In and N vacancies, with the V(In) component dominant from the positron annihilation point of view. The vacancy content increases along with increasing carbon content from less than 1 × 10(16) cm(-3) in the undoped sample up to at least 4 × 10(16) cm(-3) in the doped samples.

: http://publica.fraunhofer.de/dokumente/N-294519.html