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Ab initio identification of the nitrogen diffusion mechanism in silicon

Ab Initio Identifizierung des Diffusionsmechanismus von Stickstoff in Silicium
 
: Stoddard, N.; Pichler, P.; Duscher, G.; Windl, W.

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Physical review letters 95 (2005), Nr.2, Art. 025901
ISSN: 0031-9007
ISSN: 1079-7114
Englisch
Zeitschriftenaufsatz
Fraunhofer IISB ()
silicon; nitrogen pair; diffusion

Abstract
In this Letter, we present ab initio results identifying a new diffusion path for the nitrogen pair complex in silicon, resulting in an effective diffusivity of 67 exp(-2.38 eV/kT) cm2/s. This nudged elastic band result is compared with other nitrogen diffusion paths and mechanisms, and is determined to have unmatched agreement with experimental results. It is also shown that careful consideration of total energy corrections and use of a fully temperature-dependent diffusion prefactor have modest but important effects on the calculation of diffusivity for paired and for interstitial nitrogen.

: http://publica.fraunhofer.de/dokumente/N-29351.html