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Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography

: Fertig, F.; Greulich, J.; Rein, S.


Applied Physics Letters 104 (2014), Nr.20, Art. 201111, 5 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Messtechnik und Produktionskontrolle

We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.