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Design of a 1D and 3D monolithically integrated piezoresistive MEMS high-g accelerometer

: Külls, R.; Bruder, M.; Nau, S; Salk, M.; Thoma, K.; Hansch, W.


Institute of Electrical and Electronics Engineers -IEEE-:
1st IEEE International Symposium on Inertial Sensors and Systems, ISISS 2014. Proceedings : 25-26 February 2014, Laguna Beach, California
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-0916-2
ISBN: 978-1-4799-0915-5
4 S.
International Symposium on Inertial Sensors and Systems (ISISS) <1, 2014, Laguna Beach/Calif.>
Fraunhofer EMI ()

This paper reports on the design of a new monolithically integrated 3-axis high-g accelerometer. It is based on a 1D-sensor which exhibits a sensitivity of 0.65 μV/V/g and a resonant frequency of 1.5 MHz. Both figures are higher than for any piezoresistive high-g accelerometer in the literature or on the market and are due to an unconventional spring-mass-system geometry. The 3-axis accelerometer incorporates the 1D- design to form a single-crystal silicon 3D-sensor.